Ordered binary oxide films of V2O3„0001... on Al2O3
نویسندگان
چکیده
Ordered binary oxide films of vanadium oxide have been prepared on an aluminum oxide film supported on Mo~110! under ultrahigh vacuum conditions and characterized by various surface analytical techniques. Auger electron spectroscopy, low energy electron diffraction, high-resolution electron loss spectroscopy, x-ray photoelectron spectroscopy and ion scattering spectroscopy indicate that the vanadia films grow epitaxially on the Al2O3 /Mo~110! surface as V2O3~0001!. The results of electronic structural measurements show an increase in the energy of the a1g level in the 3d band at low temperatures, which is a possible explanation for the metal-to-insulator transition in V2O3. © 1999 American Vacuum Society. @S0734-2101~99!02104-1#
منابع مشابه
Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition
ZnO thin films were epitaxially grown on c-sapphire substrates by pulsed laser deposition at substrate temperatures of 500–800 °C. The crystal structure of ZnO films follow the epitaxial relationship of (0001)ZnO(0001)Al2O3(101̄0)ZnO (112̄0)Al2O3 . Both room temperature and cryogenic temperature photoluminescence showed a remarkable band-edge transition, and clear excitonic structures could be se...
متن کاملTransparent p-type epitaxial thin films of nickel oxide.
Transparent p-type nickel oxide (NiO) thin films have been epitaxially grown on (0001) Al2O3 substrates by a chemical solution method of polymer-assisted deposition for the first time. The films have a high optical transparency of above 95% in the wavelength range of 350-900 nm.
متن کاملStructure and Electro-Optical Properties of Thin Films Grown by Alternate Atomic Layer Deposition of ZnO and Al_{2}O_{3} on the Sapphire Substrate
Al-doped ZnO thin films were prepared on the (0001) sapphire (c-Al2O3) substrates by atomic layer deposition (ALD) using alternating pulses of Zn(C2H5)2, Al(CH3)3 and H2O precursors and post-deposition high-temperature annealing. Photoluminescence (PL) spectroscopy showed that the threshold of stimulated emission decreases with increasing Al concentration, from 49.2 kW/cm of the ZnO film to 12....
متن کاملSubstrate effects on V2O3 thin films
We apply density functional theory and the augmented spherical wave method to analyze the electronic structure of V2O3 in the vicinity of an interface to Al2O3. The interface is modeled by a heterostructure setup of alternating vanadate and aluminate slabs. We focus on the possible modifications of the V2O3 electronic states in this geometry, induced by the presence of the aluminate layers. In ...
متن کاملAfrl-ml-wp-tp-2007-560 Electrical, Structural, and Optical Properties of Cr-doped and Non- Stoichiometric V2o3 Thin Films (postprint)
V2O3 films and Cr-doped V2O3 films were grown on (0 0 0 1) (C-plane) and (1 1 2̄ 0) (A-plane) oriented sapphire substrates by the reduction of sol–gel derived vanadium oxide films. Examination by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy showed the films to be comprised of highly oriented grains. Optical transmission and resist...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1999